MP4410 2002-11-20 1 toshiba power mos fet module silicon n channel mos type (l 2 - -mosv 4 in 1) MP4410 high power, high speed switching applications. hammer drive, pulse motor drive and inductive load switching. 4 v gate drive available small package by full molding (sip 12 pin) high drain power dissipation (4 devices operation) : p t = 28 w (tc = 25c) low drain-source on resistance: r ds (on) = 0.12 ? (typ.) low leakage current: i gss = 10 a (max) (v gs = 16 v) i dss = 100 a (max) (v ds = 60 v) enhancement-mode: v th = 0.8 to 2.0 v (i d = 1 ma) maximum ratings (ta = 25c) characteristics symbol rating unit drain-source voltage v dss 60 v gate-source voltage v gss 20 v drain current i d 5 a peak drain current i dp 20 a drain power dissipation (1 device operation) p d 2.2 w ta = 25c 4.4 drain power dissipation (4 devices operation) tc = 25c p t 28 w channel temperature t ch 150 c storage temperature range t stg ? 55 to 150 c array configuration industrial applications unit: mm jedec D jeita D toshiba 2-32c1d weight: 3.9 g (typ.) 5 4 2 3 1 6 12 11 9 10 8 7
MP4410 2002-11-20 2 thermal characteristics characteristics symbol max unit thermal resistance of channel to ambient (4 devices operation, ta = 25c) r th (ch-a) 28.4 c/w thermal resistance of channel to case (4 devices operation, tc = 25c) r th (ch-c) 4.46 c/w maximum lead temperature for soldering purposes (3.2 mm from case for 10 s) t l 260 c this transistor is an electrostatic sensitive device. please handle with caution. electrical characteristics (ta = 25c) characteristics symbol test condition min typ. max unit gate leakage current i gss v gs = 16 v, v ds = 0 v D D 10 a drain cut-off current i dss v ds = 60 v, v gs = 0 v D D 100 a drain-source breakdown voltage v (br) dss i d = 10 ma, v gs = 0 v 60 D D v gate threshold voltage v th v ds = 10 v, i d = 1 ma 0.8 D 2.0 v forward transfer admittance |y fs | v ds = 10 v, i d = 2.5 a 3.0 5.0 D s i d = 2.5 a, v gs = 4 v D 0.21 0.31 drain-source on resistance r ds (on) i d = 2.5 a, v gs = 10 v D 0.12 0.16 ? input capacitance c iss D 370 D pf reverse transfer capacitance c rss D 60 D pf output capacitance c oss v ds = 10 v, v gs = 0 v, f = 1 mhz D 180 D pf rise time t r D 18 D turn-on time t on D 25 D fall time t f D 15 D switching time turn-off time t off v in : t r , t f < 5 ns, dutys cycle 1% D 170 D ns total gate charge (gate-source plus gate-drain) q g D 12 D nc gate-source charge q gs D 8 D nc gate-drain (?miller?) charge q gd i d = 5 a, v gs = 10 v, v dd = 48 v D 4 D nc source-drain diode rating and characteristics (ta = 25c) characteristics symbol test condition min typ. max unit drain reverse current i dr D D D 5 a peak drain reverse current i drp D D D 20 a diode forward voltage v dsf i dr = 5 a, v gs = 0 v D ? 1.7 v 10 v v in 12 ? v dd 30 v i d = 2.5 a v out 10 s 0 v
MP4410 2002-11-20 3 flyback-diode rating and characteristics (ta = 25c) characteristics symbol test condition min typ. max unit maximum forward current i fm D D D 5 a reverse current i r v r = 120 v D D 0.4 a reverse voltage v r i r = 100 a 120 D D v forward voltage v f i f = 1 a D D 1.8 v
MP4410 2002-11-20 4 toshiba is continually working to improve the quality and reliability of its products. nevertheless, semiconductor devices in general can malfunction or fail due to their inherent electrical sensitivity and vulnerability to physical stress. it is the responsibility of the buyer, when utilizing toshiba products, to comply with the standards of safety in making a safe design for the entire system, and to avoid situations in which a malfunction or failure of such toshiba products could cause loss of human life, bodily injury or damage to property. in developing your designs, please ensure that toshiba products are used within specified operating ranges as set forth in the most recent toshiba products specifications. also, please keep in mind the precautions and conditions set forth in the ?handling guide for semiconductor devices,? or ?toshiba semiconductor reliability handbook? etc.. the toshiba products listed in this document are intended for usage in general electronics applications (computer, personal equipment, office equipment, measuring equipment, industrial robotics, domestic appliances, etc.). these toshiba products are neither intended nor warranted for usage in equipment that requires extraordinarily high quality and/or reliability or a malfunction or failure of which may cause loss of human life or bodily injury (?unintended usage?). unintended usage include atomic energy control instruments, airplane or spaceship instruments, transportation instruments, traffic signal instruments, combustion control instruments, medical instruments, all types of safety devices, etc.. unintended usage of toshiba products listed in this document shall be made at the customer?s own risk. the information contained herein is presented only as a guide for the applications of our products. no responsibility is assumed by toshiba corporation for any infringements of intellectual property or other rights of the third parties which may result from its use. no license is granted by implication or otherwise under any intellectual property or other rights of toshiba corporation or others. the information contained herein is subject to change without notice. 000707ea a restrictions on product use
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